Share Email Print
cover

Proceedings Paper

Peculiar properties microstructure in H:LiNbO3 waveguide layers
Author(s): D. I. Shevtsov; I. S. Azanova; I. F. Taysin; I. E. Kalabin; A. B. Volyntsev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The structural defects had been found on the surface of high-doped H:LiNbO3 waveguide layers produced on X-cut LiNbO3 substrates in pure benzoic acid at T ≥ 185°C during t>1 h. The defects are similar to "scratches" but oriented definitely in reference to Z crystal axis. Measured 3D and 2D profiles show the defects outspreading above the substrate surface at a height ~4.4-9.0 nm, having width a half height ~1.7 μm and length from ~2 μm up to 100-300 rim. Areas, where the density of these defects is increased, as a rule, are limited by scratch traces from lapping and polishing. Preliminary annealing of the substrates or Ti in-diffusion at temperature ~1000 °C before PE avoid the defect formation and the substrate roughness is not changed by proton exchange.

Paper Details

Date Published: 8 June 2005
PDF: 4 pages
Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634484
Show Author Affiliations
D. I. Shevtsov, Perm Scientific-Industrial Instrument-Making Co. (Russia)
I. S. Azanova, Perm Scientific-Industrial Instrument-Making Co. (Russia)
I. F. Taysin, Perm Scientific-Industrial Instrument-Making Co. (Russia)
I. E. Kalabin, Institute of Semiconductor Physics (Russia)
A. B. Volyntsev, Perm State Univ. (Russia)


Published in SPIE Proceedings Vol. 5851:
Fundamental Problems of Optoelectronics and Microelectronics II
Yuri N. Kulchin; Oleg B. Vitrik; Vladimir I. Stroganov, Editor(s)

© SPIE. Terms of Use
Back to Top