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Proceedings Paper

B-FeSi2 cluster formation on and in silicon: morphology, electrical and optical properties
Author(s): N. G. Galkin; D. L. Goroshko; V. O. Polyarnyi; A. S. Gouralnik; I. V. Louchaninov; V. V. Ole'nik; A. V. Novikov
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Paper Abstract

Processes of β-FeSi2 nanosize islands growth on Si(111)7x7 surface and Si(111)-Cr surface phases (SP) and silicon overgrowth atop β-FeSi2 nanosize islands have been studied by LEED, in situ Hall temperature measurements and ex situ AFM and optical spectrscopy methods. It was established, that Si(111)7x7-Cr surface phase appears the influence on β-FeSi2 island orientation and crystalline structure, but island density does not change as compared with Si(111)7x7 surface. It was shown that Si(111)√3x√3/30°-Cr SP results in reduction of iron disilicide island density and their repeated nucleation on the free modified silicon surface. The optimal growth temperature (800 °C) for molecular beam epitaxy (MBE) of silicon layer atop of β-FeSi2 nanosize islands on different substrate has been determined. It was revealed, that iron disilicide clusters, grown on Si(111)7x7-Cr surface phase, appear the minimal influence on crystal structure of the silicon layer. It was observed the closed concurrence of electric parameters of silicon with buried iron disilicide clusters and atomically clean silicon that testifies to the minimal carrier scattering on these clusters and can confirm them epitaxial burying in the silicon crystal lattice. From optical spectrscopy data two direct interband transitions at 0.75 eV and 1.10 eV were observed in silcon samples with buried β-FeSi2 nanosize clusters.

Paper Details

Date Published: 8 June 2005
PDF: 11 pages
Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634477
Show Author Affiliations
N. G. Galkin, Institute for Automation and Control Processes (Russia)
D. L. Goroshko, Vladivostok State Univ. of Economics and Service (Russia)
V. O. Polyarnyi, Institute for Automation and Control Processes (Russia)
A. S. Gouralnik, Institute for Automation and Control Processes (Russia)
I. V. Louchaninov, Far Eastern State Univ. (Russia)
V. V. Ole'nik, Far Eastern State Univ. (Russia)
A. V. Novikov, Far Eastern State Univ. (Russia)

Published in SPIE Proceedings Vol. 5851:
Fundamental Problems of Optoelectronics and Microelectronics II
Yuri N. Kulchin; Oleg B. Vitrik; Vladimir I. Stroganov, Editor(s)

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