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Proceedings Paper

High-temperature and high-speed operation of 1.3-μm uncooled AlGaInAs-InP MQW-DFB lasers
Author(s): Dingli Wang; Ning Zhou; Jun Zhang; Ruikang Zhang; Xiaodong Huang; Linsong Li; Jin Chang
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Paper Abstract

In this paper, we report the high-temperature uncooled and high-speed directly modulated 1.3μm wavelength AlGaInAs/InP MQW-DFB ridge waveguide laser diodes. By optimizing the structure of active region based on AlGaInAs strained MQW, and the design of DFB grating, such as the position, coupling coefficient and the detuning with respect to the material peak gain, we have successfully fabricated high-speed and uncooled 1.3μm DFB laser diodes. Large bandwidth of 15GHz was achieved at room temperature. Large characteristic temperature of 80K and small degradation of slope efficiency of 1.2dB from 25°C to 85°C have been realized.

Paper Details

Date Published: 5 December 2005
PDF: 6 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60201U (5 December 2005); doi: 10.1117/12.634283
Show Author Affiliations
Dingli Wang, Wuhan Research Institute of Post and Telecommunications (China)
Ning Zhou, Wuhan Research Institute of Post and Telecommunications (China)
Jun Zhang, Wuhan Research Institute of Post and Telecommunications (China)
Ruikang Zhang, Wuhan Research Institute of Post and Telecommunications (China)
Xiaodong Huang, Wuhan Research Institute of Post and Telecommunications (China)
Linsong Li, Wuhan Research Institute of Post and Telecommunications (China)
Jin Chang, Wuhan Research Institute of Post and Telecommunications (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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