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Proceedings Paper

Properties of GaAs : V Grown by Liquid Phase Epitaxy
Author(s): Sathya Balasubramanian; Vikram Kumar
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Paper Abstract

Vanadium doping of GaAs during LPE growth gives rise to an electron trap with an activation energy of 0.19 eV and capture cross section of 4 x 1Ocrn.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634083
Show Author Affiliations
Sathya Balasubramanian, Indian Institute of Science (India)
Vikram Kumar, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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