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Proceedings Paper

Diffusion Studies In Silicon
Author(s): Francois Beniere
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Paper Abstract

The lecture is introduced by a survey ofselJdffusion ofSi, which gives access to the nature of the most probable point deftcts. The major results on the diffusion of the main electron donors and acceptors are then summarized. The metallic impurities which can play a crucial role in the Silicon technology are also consit'kred. Their extraordinary fast dffusivity is tentatively explained. On the other hand, dfusion methods are also proposed to remove those metals (gettering). The latest experimental and simulation results of diffusion ofhydrogen and oxygen arefinally reported.

Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634081
Show Author Affiliations
Francois Beniere, Universite de Rennes (France)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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