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Proceedings Paper

Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10-GHz optical short-pulse generation
Author(s): Q. Zhao; J. Q. Pan; J. Zhang; G. T. Zhou; J. Wu; L. F. Wang; W. Wang
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Paper Abstract

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area growth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled into a single mode fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

Paper Details

Date Published: 5 December 2005
PDF: 8 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200O (5 December 2005); doi: 10.1117/12.634032
Show Author Affiliations
Q. Zhao, Institute of Semiconductors (China)
J. Q. Pan, Institute of Semiconductors (China)
J. Zhang, Institute of Semiconductors (China)
G. T. Zhou, Beijing Univ. of Posts and Telecommunications (China)
J. Wu, Beijing Univ. of Posts and Telecommunications (China)
L. F. Wang, Institute of Semiconductors (China)
W. Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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