Share Email Print
cover

Proceedings Paper

Chemical sensing with ZnO nanowire FETs
Author(s): Zhiyong Fan; Jia G. Lu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Zinc oxide nanowires are configured as n-channel field effect transistors. These transistors are implemented as highly sensitive chemical sensors for detection of various gases such as O2, NO2, NH3, and CO at room temperature. They show oxidizing sensing property to oxygen and nitrogen dioxide. Nanowires' ammonia sensing behavior is observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K. This effect is attributed to the temperature dependent chemical potential shift. Carbon monoxide is found to increase the nanowire conductance in the presence of oxygen. Due to a Debye screening length comparable to the nanowire diameter, the electric field applied over the back gate significantly affects the sensitivity as it modulates the carrier concentration. A strong negative field is utilized to refresh the sensors by an electro-desorption mechanism. In addition, different chemisorbed species could be distinguished from the "refresh" threshold voltage and the temporal response of the conductance. These results demonstrate a refreshable field effect sensor with a potential gas identification function.

Paper Details

Date Published: 17 November 2005
PDF: 8 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080H (17 November 2005); doi: 10.1117/12.633934
Show Author Affiliations
Zhiyong Fan, Univ. of California, Irvine (United States)
Jia G. Lu, Univ. of California, Irvine (United States)


Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)

© SPIE. Terms of Use
Back to Top