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Proceedings Paper

Plasma-deposited organosilicon hydride network polymers as versatile resists for entirely dry mid-deep-UV photolithography
Author(s): Ajey M. Joshi; Timothy W. Weidman; Andrew D. Johnson; John F. Miner; Dale E. Ibbotson
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Paper Abstract

Plasma polymerized organosilicon films were used as negative tone deep-UV resists in a new all­ dry bilayer process. Quarter micron thick organosilane films were photo-oxidatively patterned using a GCA deep-UV stepper (248 nm, NA = 0.35 or 0.48) at exposures between 50-200 mJ cm-2. Patterns were dry developed with up to 15:1 selectivity by low energy chlorine plasma etching employing conditions similar to those used for the selective etching of polysilicon over Si02. Pattern transfer into underlying organic layers was achieved with greater than 50: 1 selectivity in a bilayer processing sequence by switching the etching gas to oxygen. The oxide-like etch resistance of the exposed resist to subsequent processing allowed direct, high resolution (0.25-0.35 µm US) patterning of polysilicon and aluminum using appropriate dry etch chemistries. This provides an attractive, step-saving alternative to current bi- and trilevel schemes involving deposition and multistep patterning of hard etch masks such as Si02. Photo-oxidative patterning of plasma deposited organosilane resist films and subsequent RIE development comprise a new, versatile, entirely dry photolithographic process that is compatible with commercially available deposition, exposure and plasma processing tools, and is well-suited for integration into cluster tool technology.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.633929
Show Author Affiliations
Ajey M. Joshi, AT&T Bell Labs. (United States)
Timothy W. Weidman, AT&T Bell Labs. (United States)
Andrew D. Johnson, AT&T Bell Labs. (United States)
John F. Miner, AT&T Bell Labs. (United States)
Dale E. Ibbotson, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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