Share Email Print

Proceedings Paper

Fabrication of thin wafers from nanocrystalline silicon powders
Author(s): N. N. Kononov; G. P. Kuz'min; O. V. Tikhonevitch; A. A. Surkov; E. M. Khokhlov
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The wafers of thickness 60μm÷100μm were made at compression of nanocrystalline silicon (nc-Si) powders in a range of pressures from 108 up to 109 Pa. Optical and electrical properties ofthese wafers have been investigated by means of registration of IR transmission spectra and dark conductivities. Analysis of IR absorption spectra of wafers shows that structures Si-H, Si-CHx and Ox-Si-Hy (x,y=1÷3) are formed at a pressing of nc-Si powder. We believe that these structures are formed at pressing of powder after break of links in network of a silicon atoms and consequent saturation of Si-dangling bonds by hydrogen, carbon or oxygen atoms which are located on free surfaces of silicon particles. It is found that dark conductivity of a wafer is depending on temperature of buffer gas in which original powder is formed. Wafers which have been made of the powders created at higher temperatures of a buffer gas flow had more pronounced hydrogen microstructure and higher dark conductivity. Analysis of dark conductivity vs. temperature T of the wafer shows that at the temperatures higher than approximately 270K the conductivity follows Arrhenius behavior with single activation energy, and at lower ones, conductivity is depending on T as: σ=(A/T1/2)-exp(-B/T1/4). Last equation allows asserting that variable-range hopping is mechanism oftransport in nc-Si wafers at temperatures T<270K.

Paper Details

Date Published: 7 June 2005
PDF: 6 pages
Proc. SPIE 5850, Advanced Laser Technologies 2004, (7 June 2005); doi: 10.1117/12.633740
Show Author Affiliations
N. N. Kononov, General Physics Institute (Russia)
G. P. Kuz'min, General Physics Institute (Russia)
O. V. Tikhonevitch, General Physics Institute (Russia)
A. A. Surkov, General Physics Institute (Russia)
E. M. Khokhlov, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 5850:
Advanced Laser Technologies 2004
Ivan A. Shcherbakov; Anna Giardini; Vitali I. Konov; Vladimir I. Pustovoy, Editor(s)

© SPIE. Terms of Use
Back to Top