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Proceedings Paper

Off-target model based OPC
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Paper Abstract

Model-based Optical Proximity correction has become an indispensable tool for achieving wafer pattern to design fidelity at current manufacturing process nodes. Most model-based OPC is performed considering the nominal process condition, with limited consideration of through process manufacturing robustness. This study examines the use of off-target process models - models that represent non-nominal process states such as would occur with a dose or focus variation - to understands and manipulate the final pattern correction to a more process robust configuration. The study will first examine and validate the process of generating an off-target model, then examine the quality of the off-target model. Once the off-target model is proven, it will be used to demonstrate methods of generating process robust corrections. The concepts are demonstrated using a 0.13 μm logic gate process. Preliminary indications show success in both off-target model production and process robust corrections. With these off-target models as tools, mask production cycle times can be reduced.

Paper Details

Date Published: 9 November 2005
PDF: 10 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599257 (9 November 2005); doi: 10.1117/12.633116
Show Author Affiliations
Mark Lu, Shanghai Institute of Microsystem And Information Technology of the CAS (China)
Grace Semiconductor Manufacturing Corp. (China)
Chinese Academy of Sciences (China)
Curtis Liang, Grace Semiconductor Manufacturing Corp. (China)
Dion King, Grace Semiconductor Manufacturing Corp. (China)
Lawrence S. Melvin III, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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