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Proceedings Paper

Process control and material properties of thin electroless Co-based capping layers for copper interconnects
Author(s): Nicolai Petrov; Charles Valverde; Qingyun Chen; Chen Xu; Vincent Paneccasio; Daniel Stritch; Christian Witt; Elizabeth Walker; Jeff Barnes; Michael Pavlov; Eugene Shalyt
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Paper Abstract

Present work focuses on the process characteristics and material properties of electroless deposited CoWP, and CoWB thin layers. Such material properties as atomic and phase composition of thin Co alloys are compared. Consumption rates of the bath constituents are analyzed. Line resistance change of Cu interconnects capped with CoWP and CoWB is shown. Comparison of two types of capping layers and analysis of their process formation are presented. The capability of the selective capping layer formation on narrow Cu lines has been demonstrated.

Paper Details

Date Published: 23 November 2005
PDF: 13 pages
Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020O (23 November 2005); doi: 10.1117/12.632504
Show Author Affiliations
Nicolai Petrov, Enthone Inc. (United States)
Charles Valverde, Enthone Inc. (United States)
Qingyun Chen, Enthone Inc. (United States)
Chen Xu, Enthone Inc. (United States)
Vincent Paneccasio, Enthone Inc. (United States)
Daniel Stritch, Enthone Inc. (United States)
Christian Witt, Enthone Inc. (United States)
Elizabeth Walker, ATMI (United States)
Jeff Barnes, ATMI (United States)
Michael Pavlov, ECI Technology (United States)
Eugene Shalyt, ECI Technology (United States)

Published in SPIE Proceedings Vol. 6002:
Nanofabrication: Technologies, Devices, and Applications II
Warren Y.-C. Lai; Leonidas E. Ocola; Stanley Pau, Editor(s)

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