Proceedings Paper
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Paper Abstract
We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump rejection and fluorescence selectivity. Evanescent field excitation at the LED surface is used to lessen the background due to stray pump light. The device is robust, and amenable to wafer-scale fabrication. Initial results with CdSe/ZnS quantum dot fluorophores yield a surface-bound sensitivity of 10 femtomoles, from which we predict a bulk fluid sensitivity of ~ 10 nanomolar for typical antibody-antigen assays.
Paper Details
Date Published: 17 November 2005
PDF: 9 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080R (17 November 2005); doi: 10.1117/12.632493
Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)
PDF: 9 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080R (17 November 2005); doi: 10.1117/12.632493
Show Author Affiliations
Daniel A. Cohen, Univ. of California, Santa Barbara (United States)
Hisashi Masui, Univ. of California, Santa Barbara (United States)
Mathew Schmidt, Univ. of California, Santa Barbara (United States)
Hisashi Masui, Univ. of California, Santa Barbara (United States)
Mathew Schmidt, Univ. of California, Santa Barbara (United States)
Brendan Moran, Univ. of California, Santa Barbara (United States)
Steven P. Denbaars, Univ. of California, Santa Barbara (United States)
Steven P. Denbaars, Univ. of California, Santa Barbara (United States)
Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)
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