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Proceedings Paper

Inverse lithography technology principles in practice: unintuitive patterns
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Paper Abstract

In this paper we present unintuitive patterns generated by inverse lithography technology. We show examples of contact hole masks designed with ILT that enjoy larger process windows than OPC. We also show variations in ILT-generated masks as the pitch of the contact hole array changes. In another example, we show poly masks designed for better process window to be substantially different from poly masks designed for better fidelity at nominal exposure-defocus (ED) condition. The mask with better fidelity has broken lines in comparison to the original layout. In a third example, we show deep trench mask patterns designed with ILT that, at first glance, bear no resemblance to the original layout, yet provide high fidelity in optical images. These patterns, although complex at first sight, can be generated in substantially simpler form with proper constraints without losing the spirit of ILT masks.

Paper Details

Date Published: 8 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599231 (8 November 2005); doi: 10.1117/12.632366
Show Author Affiliations
Yong Liu, Luminescent Technologies, Inc. (United States)
Dan Abrams, Luminescent Technologies, Inc. (United States)
Linyong Pang, Luminescent Technologies, Inc. (United States)
Andrew Moore, Luminescent Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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