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Proceedings Paper

Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication
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Paper Abstract

As the design rule continues to shrink towards 65nm size and beyond the defect criteria are becoming ever more challenging. Pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now becoming significant yield impacting defects. The intent of this study is to utilize the new generation DUV system to compare Die-to-Die Reflected Light inspection and Die-to-Die Transmitted Light Inspection to increase defect detection for optimization of the 65nm node process. In addition, the ReviewSmart will be implemented to help categorically identify systematic tool and process variations and thus allowing user to expedite the learning process to develop a production worthy 65nm node mask process. The learning will be applied to Samsung's pattern inspection strategy, complementing Transmitted Light Inspection, on critical layers of 65 nm node to gain ability to find defects that adversely affect process window.

Paper Details

Date Published: 4 November 2005
PDF: 11 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599209 (4 November 2005); doi: 10.1117/12.632338
Show Author Affiliations
Do Young Kim, Samsung Electronics Co., Ltd. (South Korea)
Won Il Cho, Samsung Electronics Co., Ltd. (South Korea)
Jin Hyung Park, Samsung Electronics Co., Ltd. (South Korea)
Dong Hoon Chung, Samsung Electronics Co., Ltd. (South Korea)
Byung Chul Cha, Samsung Electronics Co., Ltd. (South Korea)
Seong Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Ki Hun Park, KLA-Tencor Corp. (United States)
Nam Wook Kim, KLA-Tencor Corp. (United States)
Carl Hess, KLA-Tencor Corp. (United States)
Weimin Ma, KLA-Tencor Corp. (United States)
David Kim, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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