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Proceedings Paper

Advanced reticle inspection challenges and solutions for 65nm node
Author(s): Won D. Kim; Mark D. Eickhoff; David Kim; Sandy McCurley
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Paper Abstract

Silicon Technology Development for the ITRS 65nm-node is in the final stage of an intense 2-year cycle with the full-entitlement technology qualification by the end of 2005. Accordingly, reticle technology development in support of the 65nm-node has advanced a great deal since the initial efforts began several years ago. One of the most challenging aspects of 65nm-node mask technology development is the mask inspection, which is also the main cost-driver for the 65nm-node reticle technology. As a result, controlling 65nm-node reticle cost via leveraging advanced mask inspection technologies has become a leading factor in enabling prolonged success of the 65-nm node technology for years to come. With this paper, we report our closing work on reticle inspection capability development for the 65nm-node process technology development cycle for a full-volume production ramp.

Paper Details

Date Published: 4 November 2005
PDF: 12 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920C (4 November 2005); doi: 10.1117/12.632322
Show Author Affiliations
Won D. Kim, Texas Instruments, Inc. (United States)
Mark D. Eickhoff, KLA-Tencor Corp. (United States)
David Kim, KLA-Tencor Corp. (United States)
Sandy McCurley, Texas Instruments, Inc. (United States)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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