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Proceedings Paper

Semiconductor pattern analysis with induced polarization
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Paper Abstract

Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

Paper Details

Date Published: 5 November 2005
PDF: 9 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921L (5 November 2005); doi: 10.1117/12.632240
Show Author Affiliations
Tao Chen, College of Optical Sciences/Univ. of Arizona (United States)
Tom Milster, College of Optical Sciences/Univ. of Arizona (United States)
Seung Hune Yang, College of Optical Sciences/Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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