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Proceedings Paper

A films based approach to intensity imbalance correction for 65nm node c:PSM
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Paper Abstract

Intensity imbalance between the 0 and π phase features of c:PSM cause gate CD control and edge placement problems. Strategies such as undercut, selective biasing, and combinations of undercut and bias are currently used in production to mitigate these problems. However, there are drawbacks to these strategies such as space CD delta through pitch, gate CD control through defocus, design rule restrictions, and reticle manufacturability. This paper investigates the application of an innovative films-based approach to intensity balancing known as the Transparent Etch Stop Layer (TESL). TESL, in addition to providing a host of reticle quality and manufacturability benefits, also can be tuned to significantly reduce imbalance. Rigorous 3D vector simulations and experimental data compare through pitch and defocus performance of TESL and conventional c:PSM for 65nm design rules.

Paper Details

Date Published: 9 November 2005
PDF: 9 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920J (9 November 2005); doi: 10.1117/12.632214
Show Author Affiliations
Rand Cottle, Photronics, Inc. (United States)
Pierre Sixt, Photronics France S.A.S. Crolles (France)
Matt Lassiter, Photronics, Inc. (United States)
Marc Cangemi, Photronics, Inc. (United States)
Patrick Martin, Photronics, Inc. (United States)
Chris Progler, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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