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Proceedings Paper

Improved modeling of fogging and loading effect correction
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Paper Abstract

The correction of fogging effect from an electron beam writer and loading effect from a dry etcher are known as the important factors of non-uniformity of mask CD. To achieve the improvement of CD uniformity, the fogging and loading effect are modeled as a function of pattern density. Taking into account the different behavior of fogging and loading effect on the pattern density, the amount of correction is able to be extracted using the promising modeling and dose modulation technique. In this work, we report the evaluation of correction method with improved model using the linear combination of fogging and loading effect. We compared the various cases and presented the best result of the improvement of CD uniformity.

Paper Details

Date Published: 9 November 2005
PDF: 7 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924U (9 November 2005); doi: 10.1117/12.632078
Show Author Affiliations
Sanghee Lee, Samsung Electronics Co., Ltd. (South Korea)
Byunggook Kim, Samsung Electronics Co., Ltd. (South Korea)
Hakseung Han, Samsung Electronics Co., Ltd. (South Korea)
Dongseok Nam, Samsung Electronics Co., Ltd. (South Korea)
Seongyong Moon, Samsung Electronics Co., Ltd. (South Korea)
Seongwoon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woosung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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