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Proceedings Paper

Investigation of sulfate-free clean processes for next generation lithography
Author(s): Christian Chovino; Stefan Helbig; Petr Haschke; Werner Saule
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Paper Abstract

Today, haze and crystal growth on the reticle surface are still a primary concern of the microlithography industry. The crystals limit the reticle usage as they result in printable defects on the wafers. Numerous studies have been presented so far. The general belief is that different root causes can lead to crystal growth and haze formation, among them the contaminants on the mask surface from the clean processes. In this paper we are investigating the potential of sulfate free clean processes based on ozonated and hydrogen water for the next generation of photomasks. Key parameters such as cleaning efficiency, as well as the impact of the chemistry on the mask optical properties will be presented. The potential of the chemistry will be discussed and compared to the standard cleaning processes.

Paper Details

Date Published: 8 November 2005
PDF: 9 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923E (8 November 2005); doi: 10.1117/12.632055
Show Author Affiliations
Christian Chovino, Advanced Mask Technology Ctr. GmbH (Germany)
Stefan Helbig, STEAG HamaTech AG (Germany)
Petr Haschke, STEAG HamaTech AG (Germany)
Werner Saule, STEAG HamaTech AG (Germany)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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