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Proceedings Paper

Advanced e-beam CAR resist evaluation for 65nm generation
Author(s): Gordon Chan; Orson Lin; Wesen Tseng; Booky Lee; Torey Huang; Makoto Kozuma
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Paper Abstract

Chemically amplified resists, CAR, and 50kV e-beam writers have been applied for the most advance mask manufacturing. To fulfill the requirement of 65nm generation a good performance resist played an important role. In this work, two advanced positive and negative CAR resist has been evaluated for 65nm photomask process with a 50kV e-beam pattern generator in an advanced process line. For 65nm node not only the resolution is needed to be improved but also the cirtical dimension(CD) control will be more critical than previous generation. So the evaluation is focus on the CD performance, resolution, profile, e-beam sensitivity, line edge roughness(LER), etc.

Paper Details

Date Published: 8 November 2005
PDF: 6 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923B (8 November 2005); doi: 10.1117/12.632052
Show Author Affiliations
Gordon Chan, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Orson Lin, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Wesen Tseng, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Booky Lee, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Torey Huang, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Makoto Kozuma, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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