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Proceedings Paper

The surface treatment for prevention of growing defect
Author(s): Jea-Young Jun; Ji-Sun Ryu; Yongk-Yoo Choi; Oscar Han
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Paper Abstract

This is an experimental result for the inhibition of effects of the growing defect. Up to now, it has been considered and defined that the growing defect is an unexpected and unusual reaction by bonding impure ions existed on the mask each other. This study is not only to suppress the unexpected reaction when making the final mask but also to stabilize the surface of mask by controlling by-product occurred when stripping upper Cr layer and damaged layer from sputtering process. According to the analysis of the surface roughness stemming from each process (from wet etching to cleaning Process) of MoSi layer, the surface still comes to be rough when a mask is done through all process. So, heat treatment was performed and surface roughness was measured to figure out how much the surface condition would be improved and how many remaining SO4, NH4 Ions on the surface after cleaning process reduced. This study shows the major factor causing plasma damage is a dry etcher, a way to control the damaged layer of MoSi at PR strip process, the level of stabilization of mask surface through cleaning process and a clue to be able to prove the stabilization by adding specific process. Analysis tools for this study are as follows. AFM (for checking the roughness of surface), TEM (for checking cross-section) and IC (Ion chromatography)analysis equipment.

Paper Details

Date Published: 5 November 2005
PDF: 12 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921F (5 November 2005); doi: 10.1117/12.632044
Show Author Affiliations
Jea-Young Jun, Hynix Semiconductor Inc. (South Korea)
Ji-Sun Ryu, Hynix Semiconductor Inc. (South Korea)
Yongk-Yoo Choi, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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