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Proceedings Paper

Predicting wafer-level IP error due to particle-induced EUVL reticle distortion during exposure chucking
Author(s): Vasu Ramaswamy; Andrew Mikkelson; Roxann Engelstad; Edward Lovell
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Paper Abstract

The mechanical distortion of an EUVL mask from mounting in an exposure tool can be a significant source of wafer-level image placement error. In particular, the presence of debris lodged between the reticle and chuck can cause the mask to experience out-of-plane distortion and in-plane distortion. A thorough understanding of the response of the reticle/particle/chuck system during electrostatic chucking is necessary to predict the resulting effects of such particle contamination on image placement accuracy. In this research, finite element modeling is employed to simulate this response for typical clamping conditions.

Paper Details

Date Published: 8 November 2005
PDF: 7 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923T (8 November 2005); doi: 10.1117/12.631362
Show Author Affiliations
Vasu Ramaswamy, Univ. of Wisconsin, Madison (United States)
Andrew Mikkelson, Univ. of Wisconsin, Madison (United States)
Roxann Engelstad, Univ. of Wisconsin, Madison (United States)
Edward Lovell, Univ. of Wisconsin, Madison (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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