Share Email Print
cover

Proceedings Paper

Failure analysis of GaN-based current-injected vertical cavity surface-emitting lasers
Author(s): Joachim Piprek
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper investigates internal physical mechanisms that have thus far prevented current-injected InGaN/GaN verticalcavity surface-emitting lasers (VCSELs) from lasing. Advanced device simulation is applied to a realistic VCSEL design. Several obstacles to lasing are identified, including current leakage, lateral carrier non-uniformity, and selfheating during pulsed operation.

Paper Details

Date Published: 25 October 2005
PDF: 9 pages
Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 60130B (25 October 2005); doi: 10.1117/12.631229
Show Author Affiliations
Joachim Piprek, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6013:
Optoelectronic Devices: Physics, Fabrication, and Application II
Joachim Piprek, Editor(s)

© SPIE. Terms of Use
Back to Top