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Proceedings Paper

Failure analysis of GaN-based current-injected vertical cavity surface-emitting lasers
Author(s): Joachim Piprek
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Paper Abstract

This paper investigates internal physical mechanisms that have thus far prevented current-injected InGaN/GaN verticalcavity surface-emitting lasers (VCSELs) from lasing. Advanced device simulation is applied to a realistic VCSEL design. Several obstacles to lasing are identified, including current leakage, lateral carrier non-uniformity, and selfheating during pulsed operation.

Paper Details

Date Published: 25 October 2005
PDF: 9 pages
Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 60130B (25 October 2005); doi: 10.1117/12.631229
Show Author Affiliations
Joachim Piprek, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 6013:
Optoelectronic Devices: Physics, Fabrication, and Application II
Joachim Piprek, Editor(s)

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