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Proceedings Paper

Silicon Raman amplifiers lasers and their applications
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Paper Abstract

Silicon Photonics is emerging as an attractive technology in order to realize low cost, high density integrated optical circuits. Realizing active functionalities in Silicon waveguiding structures is being pursued rigorously. In particular, the Stimulated Raman scattering process has attracted considerably attention for achieving on-chip light generation, amplification and wavelength conversion. This paper reviews some of the recent efforts in using the Raman nonlinear process to realize amplifiers, and lasers. First the prospects of Raman process in realizing high gain amplifiers are discussed theoretically. Following this experimental results on amplification with gains as high as 20dB are presented. Some of the recent results in realizing pulsed and CW lasers with reverse-biased carrier sweep out are presented. The paper is concluded by highlighting some of the applications of the Raman process in Silicon in realizing mid-IR sources and also the use of SiGe as a flexible Raman medium are discussed.

Paper Details

Date Published: 25 October 2005
PDF: 6 pages
Proc. SPIE 6014, Active and Passive Optical Components for WDM Communications V, 601402 (25 October 2005); doi: 10.1117/12.630907
Show Author Affiliations
Bahram Jalali, Univ. of California, Los Angeles (United States)
Ozdal Boyraz, Univ. of California, Irvine (United States)
Varun Raghunathan, Univ. of California, Los Angeles (United States)
Dimitri Dimitropoulos, Univ. of California, Los Angeles (United States)
Prakash Koonath, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 6014:
Active and Passive Optical Components for WDM Communications V
Achyut K. Dutta; Yasutake Ohishi; Niloy K. Dutta; Jesper Moerk, Editor(s)

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