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Proceedings Paper

Closed-loop design of active semiconductor quantum well material systems
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Paper Abstract

Semiconductor quantum well active structures are pervasive in many applications of defense related systems ranging from low power edge (DFB), VCSEL and VCSEL emitter arrays to high power low brightness broad area emitters and diode bars. Recent breakthroughs in the development of a new class of high brightness vertical external cavity (VECSEL) emitters offers the potential to replace solid state YAG kW-class laser weapons systems. Remarkably, despite the maturity and dramatic improvement in quality of semiconductor QW growth over the past three decades, there has been no truly predictive means of designing the semiconductor active structure and fast-tracking to a final packaged device. We will describe a fully self-consistent microscopic many-body approach to calculate optical gain, absorption, refractive index spectra and nonradiative recombination rates for a broad class of semiconductor quantum well material systems. The theoretical calculations are free of ad hoc parameter adjustments and provide, for the first time, a means of designing an active semiconductor epi-structure in a predictive manner.

Paper Details

Date Published: 15 October 2005
PDF: 10 pages
Proc. SPIE 5990, Optically Based Materials and Optically Based Biological and Chemical Sensing for Defence II, 599002 (15 October 2005); doi: 10.1117/12.630853
Show Author Affiliations
J. V. Moloney, Univ. of Arizona (United States)
Optical Sciences Ctr./Univ. of Arizona (United States)
J. Hader, Univ. of Arizona (United States)
Optical Sciences Ctr./Univ. of Arizona (United States)
S. W. Koch, Univ. of Marburg (Germany)


Published in SPIE Proceedings Vol. 5990:
Optically Based Materials and Optically Based Biological and Chemical Sensing for Defence II
Anthony W. Vere; John C. Carrano; Arturas Zukauskas; James G. Grote; Francois Kajzar, Editor(s)

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