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Proceedings Paper

Single nanoparticle semiconductor devices
Author(s): Yongping Ding; Ying Dong; Ameya Bapat; Julia Deneen; C. Barry Carter; Uwe R. Kortshagen; Stephen A. Campbell
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Paper Abstract

Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn- off characteristics and on-current densities of more than 107 A/cm2.

Paper Details

Date Published: 23 November 2005
PDF: 7 pages
Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020I (23 November 2005); doi: 10.1117/12.630852
Show Author Affiliations
Yongping Ding, Univ. of Minnesota (United States)
Ying Dong, Univ. of Minnesota (United States)
Ameya Bapat, Univ. of Minnesota (United States)
Julia Deneen, Univ. of Minnesota (United States)
C. Barry Carter, Univ. of Minnesota (United States)
Uwe R. Kortshagen, Univ. of Minnesota (United States)
Stephen A. Campbell, Univ. of Minnesota (United States)


Published in SPIE Proceedings Vol. 6002:
Nanofabrication: Technologies, Devices, and Applications II
Warren Y.-C. Lai; Leonidas E. Ocola; Stanley Pau, Editor(s)

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