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Proceedings Paper

720-mW continuous wave room-temperature operation diode laser emitting at around 2.4µm
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Paper Abstract

Specific developments on technological steps involved in the fabrication of antimony based diode lasers have been carried out. Evident improvements of the performances have been achieved. High power, low threshold, room temperature (RT) and continuous wave (CW) operation laser diodes emitting around 2.4μm, based on the InGaAsSb / AlGaAsSb materials system, have been realised. with a 100μm wide and 1mm long cavity laser, a maximum output power of 720mW has been obtained at 285K.

Paper Details

Date Published: 3 November 2005
PDF: 9 pages
Proc. SPIE 5989, Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II, 598908 (3 November 2005); doi: 10.1117/12.630661
Show Author Affiliations
Michel Garcia, Alcatel Thales III-V Lab. (France)
Yves Rouillard, Univ. of Montpellier II (France)
Eric Tournié, Univ. of Montpellier II (France)
Michel Krakowski, Alcatel Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 5989:
Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II
Sean M. Kirkpatrick; David H. Titterton; Roger Appleby; J. Martyn Chamberlain; Razvan Stoian; Keith A. Krapels, Editor(s)

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