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Proceedings Paper

1550 nm surface normal electroabsorption modulators for free space optical communications
Author(s): Qin Wang; Stéphane Junique; Susanne Almqvist; Daniel Ågren; Bertrand Noharet; Jan Y. Andersson
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Paper Abstract

We report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on InGaAs/InAlAs coupled quantum wells grown on InP substrate by MBE. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology. The modulator size, shape, contact arrangements, and the array configurations have been varied to achieve suitable device performance for different retro-reflective free-space optical communication links. The device electrical and optical properties have been characterized by I-V, photoluminescence, absorption, transmittance and reflectance measurements. Modulators exhibit contrast ratios of 2:1 at a 3V driving bias and contrast ratios of 2:1 over a 30 nm bandwidth at 6V. A maximum contrast ratio of 4:1 is obtained at a 12 V driving voltage.

Paper Details

Date Published: 26 October 2005
PDF: 7 pages
Proc. SPIE 5986, Unmanned/Unattended Sensors and Sensor Networks II, 598610 (26 October 2005); doi: 10.1117/12.630395
Show Author Affiliations
Qin Wang, Acreo AB (Sweden)
Stéphane Junique, Acreo AB (Sweden)
Susanne Almqvist, Acreo AB (Sweden)
Daniel Ågren, Acreo AB (Sweden)
Bertrand Noharet, Acreo AB (Sweden)
Jan Y. Andersson, Acreo AB (Sweden)


Published in SPIE Proceedings Vol. 5986:
Unmanned/Unattended Sensors and Sensor Networks II
Edward M. Carapezza, Editor(s)

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