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Proceedings Paper

Photonics integrations enabling high-end applications of InP in optical data transmissions
Author(s): Jiaming Zhang; Newton Frateschi; Ram Jambunathan; Wonjin Choi; Aaron E. Bond
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Paper Abstract

We present here results from a uniquely designed InP modulator chip combined with advanced packaging concepts, which enables high-end applications in optical data communications. An electroabsorption (EA) modulator, with a strained InGaAsP or InGaAlAs multiple quantum well structure, is monolithically integrated with a semiconductor optical amplifier. This design offers broad wavelength tunability while maintaining high extinction ratio, high optical output power, and high dispersion tolerance. The amplified EA modulator chip is co-packaged with a distributed feed back (DFB) laser ensuring separate optimization of the laser and modulator sections. The optical isolator, placed between the laser and modulator, completely eliminates adiabatic chirp. This Telcordia-qualified laser integrated modulator platform enables superior performance previously not thought possible for InP absorption based modulators. 11dB of dynamic extinction ratio, 5dBm of modulated output power, and ±1200ps/nm or +1600ps/nm dispersion tolerance can be simultaneously achieved in un-amplified 10Gb/s data transmission. Full C-band tunability using a single device is also demonstrated with the LIM module. Extensive simulations and transmission system evaluations shows that with the controllable chirp, the cost-effective LIM performs as well as a Mach-Zehnder modulator in dispersion managed and amplified long-haul WDM systems. Lastly, the first uncooled 10Gb/s long-reach operation at 1550nm was demonstrated with LIM packages. Using a simple control algorithm, a constant modulated output power of 1dBm with less than 1dB dispersion penalty over 1600ps/nm single mode fiber is achieved in an 80 degrees environmental temperature range without any module temperature control. Utilizing the Al-based material system, also allows a reduced variation of the extinction ratio.

Paper Details

Date Published: 25 October 2005
PDF: 13 pages
Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 60130H (25 October 2005); doi: 10.1117/12.630237
Show Author Affiliations
Jiaming Zhang, Apogee Photonics, Inc. (United States)
Newton Frateschi, Univ. Estadual de Campinas (Brazil)
Ram Jambunathan, Apogee Photonics, Inc. (United States)
Wonjin Choi, Apogee Photonics, Inc. (United States)
Aaron E. Bond, Apogee Photonics, Inc. (United States)


Published in SPIE Proceedings Vol. 6013:
Optoelectronic Devices: Physics, Fabrication, and Application II
Joachim Piprek, Editor(s)

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