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Proceedings Paper

Image placement accuracy of single-membrane stencil masks for e-beam lithography
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Paper Abstract

Three stencil masks with simple die layouts on 24 mm x 24 mm Si membranes are made to compare simulation and experiment on image placement (IP). A pseudo finite element (FE) modeling is adopted. Displacements predicted by simulation are found to be smaller than experimental values, but both agree qualitatively. Four stencil masks with die layouts that model on ULSI hole layers in 30% opening ratio and pattern arrangement are successfully made. Displacements are reduced to 1/4 by adopting IP correction. The IP correction of EB data is found to be a useful method of reducing IP error.

Paper Details

Date Published: 8 November 2005
PDF: 12 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924R (8 November 2005); doi: 10.1117/12.630114
Show Author Affiliations
Minoru Kitada, Dai Nippon Printing Co., Ltd. (Japan)
Satoshi Yusa, Dai Nippon Printing Co., Ltd. (Japan)
Naoko Kuwahara, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Fujita, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hisatake Sano, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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