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Proceedings Paper

Mitigating intrinsic defects and laser damage using pulsetrain-burst (>100 MHz) ultrafast laser processing
Author(s): Luke McKinney; Felix Frank; David Graper; Jesse Dean; Paul Forrester; Maxence Rioblanc; Marc Nantel; Robin Marjoribanks
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Paper Abstract

Ultrafast-laser micromachining has promise as an approach to trimming and 'healing' small laser-produced damage sites in laser-system optics--a common experience in state-of-the-art high-power laser systems. More-conventional approaches currently include mechanical micromachining, chemical modification, and treatment using cw and long-pulse lasers. Laser-optics materials of interest include fused silica, multilayer dielectric stacks for anti-reflection coatings or high-reflectivity mirrors, and inorganic crystals such as KD*P, used for Pockels cells and frequency-doubling. We report on novel efforts using ultrafast-laser pulsetrain-burst processing (microsecond bursts at 133 MHz) to mitigate damage in fused silica, dielectric coatings, and KD*P crystals. We have established the characteristics of pulsetrain-burst micromachining in fused silica, multilayer mirrors, and KD*P, and determined the etch rates and morphology under different conditions of fluence-delivery. From all of these, we have begun to identify new means to optimize the laser-repair of optics defects and damage.

Paper Details

Date Published: 13 October 2005
PDF: 14 pages
Proc. SPIE 5970, Photonic Applications in Devices and Communication Systems, 59701L (13 October 2005); doi: 10.1117/12.629985
Show Author Affiliations
Luke McKinney, Univ. of Toronto (Canada)
Felix Frank, Univ. of Toronto (Canada)
David Graper, Univ. of Toronto (Canada)
Jesse Dean, Univ. of Toronto (Canada)
Paul Forrester, Univ. of Toronto (Canada)
Maxence Rioblanc, Ecole Supérieure d'Optique (France)
Marc Nantel, OCE Inc. (Canada)
Univ. of Toronto (Canada)
Robin Marjoribanks, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 5970:
Photonic Applications in Devices and Communication Systems
Peter Mascher; John C. Cartledge; Andrew Peter Knights; David V. Plant, Editor(s)

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