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Proceedings Paper

Highly oriented and ordered semiconductor nanowire arrays for photonic device applications
Author(s): Z. H. Wu; J. Gierak; E. Bourhis; A.-L. Biance; H. E. Ruda
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Paper Abstract

Highly oriented gallium arsenide (GaAs) nanowires are grown on GaAs (100), (110) and (111) substrates by molecularbeam epitaxy using vapor-liquid-solid growth. The preferred growth direction of the nanowires is <111>. GaAs nanowire arrays are grown using a number of approaches such as nanochannel alumina template, gold colloid, and patterns fabricated using focused ion beam. Large interwire separation in the range of submicron can be obtained using the later two methods, which is required for applications in photonic devices such as photonic crystals.

Paper Details

Date Published: 1 October 2005
PDF: 6 pages
Proc. SPIE 5971, Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics, 597117 (1 October 2005); doi: 10.1117/12.629906
Show Author Affiliations
Z. H. Wu, Univ. of Toronto (Canada)
J. Gierak, Ctr. National de la Recherche Scientifique (France)
E. Bourhis, Ctr. National de la Recherche Scientifique (France)
A.-L. Biance, Ctr. National de la Recherche Scientifique (France)
H. E. Ruda, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 5971:
Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics
Roberto A. Morandotti; Harry E. Ruda; Jianping Yao, Editor(s)

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