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Proceedings Paper

Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap
Author(s): Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky; Andriy P. Vlasov; Grygoriy A. II'chuk
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Paper Abstract

The paper theoretically investigates the peculiarities of graded-gap photodiodes in which the band gap linearly increases from the metallurgical boundary of p-n junction. On the basis of derived analytical expression for the photocurrent the spectral distribution of quantum efficiency of photoconversion and its dependence on the band gap gradient and surface recombination velocity are analysed. Numerical calculations are carried out as applied to a thin layer photodiode based on the CdHgTe graded-gap solid solution. The advantages of this type of graded-gap photodiodes over their homoband analogues are discussed.

Paper Details

Date Published: 7 June 2005
PDF: 6 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628909
Show Author Affiliations
Bogdan S. Sokolovsky, Ivan Franko National Univ. of Lviv (Ukraine)
Volodymyr K. Pysarevsky, Ivan Franko National Univ. of Lviv (Ukraine)
Andriy P. Vlasov, Ivan Franko National Univ. of Lviv (Ukraine)
Grygoriy A. II'chuk, Lviv National Polytechnic Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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