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Proceedings Paper

Diffusion length in p-type HgCdTe expitaxial layer determination
Author(s): K. Boltar; N. Iakovleva
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Paper Abstract

Charge carriers diffusion length needs to be exactly calculated in p-type HgCdTe (MCT) epitaxial layers to design focal plane array (FPA) with small crosstalk and high performance. The mathematical model and the computing program to determine the minority carriers diffusion length from experimental data of photodiode spatial signal response versus the optical spot position along the pixel have been developed. The correlation of diffusion length data with other methods data has been analyzed.

Paper Details

Date Published: 7 June 2005
PDF: 4 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628908
Show Author Affiliations
K. Boltar, RD&P Ctr. ORION (Russia)
N. Iakovleva, RD&P Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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