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Proceedings Paper

HgCdTe based PEM detector for middle range of IR spectrum
Author(s): F. N. Gaziyev; I. A. Nasibov; T. I. Ibragimov; E. K. Huseynov
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Paper Abstract

The calculation of dependence photoelectric parameters of the uncooled photoelectromagnetic (PEM) detector of infrared range of spectrum on the basis of monocrystals CdxHg1-xTe (x=0,2) from the level of an acceptor doping of semiconductor material was carried out. It is shown that the optimum acceptor doping allows to increase essentially both the voltage response and specific detectivity of photodetector. The modified construction of the PEM detector permitting to increase more its voltage response is represented. The photoelectric parameters of manufactured PEM detector for middle range of IR-spectrum of 3-7 μm with a maximum of responsivity near 6 μm are given.

Paper Details

Date Published: 7 June 2005
PDF: 10 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628871
Show Author Affiliations
F. N. Gaziyev, Institute of Physics (Azerbaijan)
I. A. Nasibov, Institute of Physics (Azerbaijan)
T. I. Ibragimov, Institute of Physics (Azerbaijan)
E. K. Huseynov, Institute of Physics (Azerbaijan)

Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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