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Proceedings Paper

Mathematical modelling of the processes of crystal growth in CdZnTe by physical transport in inert gas
Author(s): A. A. Melnikov; N. A. Kulchitsky; A. N. Kulchitsky
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Paper Abstract

Modeling of crystal growth processing in CdZnTe system by physical transport of solid solution components in inert gas are discussed. The model allow to calculate the composition of a single crystal of solid solution Cd1-xZnxTe, growth by physical vapor transport or the parameters of vapor phase source with the purpose of obtaining the preset composition of a single crystal of a solid solution.

Paper Details

Date Published: 7 June 2005
PDF: 5 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628868
Show Author Affiliations
A. A. Melnikov, Moscow State Institute of Radioengineering, Electronics and Automation (Russia)
N. A. Kulchitsky, Moscow State Institute of Radioengineering, Electronics and Automation (Russia)
A. N. Kulchitsky, Moscow State Institute of Radioengineering, Electronics and Automation (Russia)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices

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