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Proceedings Paper

The effect of low-temperature annealing on the electrical and structural properties of epitaxial layers of CMT and MMT
Author(s): I. M. Nesmelova; V. N. Ryzhkov; G. G. Gumarov; V. Y. Petukhov; V. A. Andreev
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Paper Abstract

The effect of the low-temperature annealing (2 hours at 120°C and 2 hours at 200°C) on epitaxial layers of HgCdTe and HgMnTe was investigated. HgCdTe and HgMnTe layers were produced by the liquid-phase epitaxial method. The Hall effect electroconductivity X-ray diffraction before and after annealing were determined. It was shown that low-temperature annealing produces almost no change in electro-physical parameters of HgMnTe layers but about 90% of HgCdTe layers had increased concentration of charge carries or changed conductivity type. After thermal annealing the crystal surface quality of the HgMnTe layers was improved. The layers HgCdTe do not show such a tendency.

Paper Details

Date Published: 7 June 2005
PDF: 5 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628699
Show Author Affiliations
I. M. Nesmelova, FSUE NPO State Institute of Applied Optics (Russia)
V. N. Ryzhkov, FSUE NPO State Institute of Applied Optics (Russia)
G. G. Gumarov, Kazan Physical Technical Institute (Russia)
V. Y. Petukhov, Kazan Physical Technical Institute (Russia)
V. A. Andreev, FSUE NPO State Institute of Applied Optics (Russia)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices

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