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Proceedings Paper

Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode
Author(s): V. V. Vasilyev; A. V. Predein
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Paper Abstract

Properties of n+-on-p HgCdTe photodiode with graded p-P heterojunction at temperature 77 K are analysed numerically by solving three-dimensional diffusion equation in cylindrical geometry. Dependences of photodiode's parameters from composition difference Δx and position of p-n junction in relation to heterojunction are presented. Elimination of lateral collection of diffusion current with increasing of Δx is shown.

Paper Details

Date Published: 7 June 2005
PDF: 9 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628689
Show Author Affiliations
V. V. Vasilyev, Institute of Semiconductor Physics (Russia)
A. V. Predein, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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