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Proceedings Paper

Photoelectric properties of isotype heterojunctions n-InSe/n-CuInSe2 in visible and near-IR region
Author(s): A. Sh. Abdinov; R. F. Babayeva; R. M. Ismayilov; G. H. Eyvazova
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Paper Abstract

By the method of landing to optical contact isotype n-InSe< REE >/n-CuInSe2 heterojunctions with percentage of introduced impurity NREE=0; 10-5; 10-4; 10-3; 10-2 and 10-1 at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on NREE have been found out and mechanisms for their explanations have been offered.

Paper Details

Date Published: 7 June 2005
PDF: 4 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628683
Show Author Affiliations
A. Sh. Abdinov, Baku State Univ. (Azerbaijan)
R. F. Babayeva, Baku State Univ. (Azerbaijan)
R. M. Ismayilov, Baku State Univ. (Azerbaijan)
G. H. Eyvazova, Baku State Univ. (Azerbaijan)

Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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