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Proceedings Paper

Photoelectric properties of films A2B2C6 deposited from a solution
Author(s): A. Sh. Abdinov; M. A. Jafarov; E. F. Nasirov
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Paper Abstract

In the present work the photochemical reaction in Cd1-xZnxS(Se) films considered depending on technological modes of their deposition and heat treatment (HT). In Cd1-xZnxS(Se) films the formation of Cdi-Cdi, Zni-Zni, VSe-Zni etc. associations provides occurrence of optical active electronic states carried in an interval of energy 0.3-0.6 eV allows using of a Cd1-xZnxS(Se) films for creation on their basis non-cooled photodetectors in the IR-range. At illumination by light of λ=0.95 μm were observed anomalous photoconductivity and photomemory phenomenon connected with existence in them defects with metastable states which concentration can be operated depending on structure deposition and heat treatment (HT) mode and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. In Cd1-xZnxS(Se) films after HT on air during 10-15 minutes was observed the photochemical reaction with activation energy of 0.17-0.21 eV representing disintegration process of donor-acceptor pairs consisting of the r-centres and the Cdi, Zni donors at illumination with light of λ=1.25 μm and caused by precipitation conditions and HT.

Paper Details

Date Published: 7 June 2005
PDF: 6 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628678
Show Author Affiliations
A. Sh. Abdinov, Baku State Univ. (Azerbaijan)
M. A. Jafarov, Baku State Univ. (Azerbaijan)
E. F. Nasirov, Baku State Univ. (Azerbaijan)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices

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