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Proceedings Paper

Light emission from ZnSe nanowires
Author(s): U. Philipose; Harry E. Ruda; T. Xu; S. Yang; P. Sun
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Paper Abstract

Arrays of free-standing ZnSe nanowires of length 8-10 μm and diameter 60-150 nm were fabricated by Au-catalyzed vapor-liquid-solid growth. Electron microscopy showed that these were high quality single crystal nanowires. Photoluminescence (PL) measurements of the as-grown nanowires were characterized by weak near band edge emission and strong defect-related emission. The effect of post-growth annealing on the PL spectra under both Zn-rich and Se-rich conditions were studied. Annealing under a Zn-rich atmosphere was found to significantly enhance the near band edge emission and suppress deep-level emission, resulting in spectra dominated by the near band edge emission. On the other hand, annealing in a Se-rich atmosphere had the reverse effect, resulting in spectra dominated by deep level emission.

Paper Details

Date Published: 1 October 2005
PDF: 13 pages
Proc. SPIE 5971, Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics, 597116 (1 October 2005); doi: 10.1117/12.628675
Show Author Affiliations
U. Philipose, Univ. of Toronto (Canada)
Harry E. Ruda, Univ. of Toronto (Canada)
T. Xu, Univ. of Toronto (Canada)
S. Yang, Univ. of Toronto (Canada)
P. Sun, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 5971:
Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics
Roberto A. Morandotti; Harry E. Ruda; Jianping Yao, Editor(s)

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