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Proceedings Paper

Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum
Author(s): Eldar Yu. Salaev; A. M. Nazarov; S. I. Gadjieva
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Paper Abstract

Photosensitive isoperiodical heterojunctions (HJ) Pb1-xSnxSe(In)/PbSe1-xSx were obtained in the ultrahigh vacuum (≤3÷5•10-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF2. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J0exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5÷2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λmax=12.0 μm. The increase of the temperature ofthe HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.

Paper Details

Date Published: 7 June 2005
PDF: 4 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628673
Show Author Affiliations
Eldar Yu. Salaev, Institute of Physics (Azerbaijan)
A. M. Nazarov, Institute of Physics (Azerbaijan)
S. I. Gadjieva, Institute of Physics (Azerbaijan)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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