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Proceedings Paper

Photoelectrical and optical properites of Pb1-xMnxTe(Ga) epitaxial films
Author(s): H. R. Nuriyev; S. S. Farzaliyev; N. V. Faradjev; R. M. Sadigov
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Paper Abstract

The experimental results of photoelectric and optic properties on the gallium contained (NGa=O,5÷1 at%), Pb1-xMnxTe epitaxial films with thickness d=1÷5 μm, obtained by a molecular beam condensation method on BaF2 (111) substrate have been presented. The films have been photosensitivity at T=77 K and spectral maximum of photosensitivity were displacement in the short-wave length of spectrum with introduction Mn which are introduced to some increasing of the gap width in Pb1-xMnxTe. Analogous phenomenon have been observed by investigating of absorption optic edge bound also by the increase gap width. The magnitudes of gap width determined by spectral dependence of absorption edge and photoconductivity are in the satisfactorily condition.

Paper Details

Date Published: 7 June 2005
PDF: 4 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628669
Show Author Affiliations
H. R. Nuriyev, Institute of Physics (Azerbaijan)
S. S. Farzaliyev, Institute of Physics (Azerbaijan)
N. V. Faradjev, Institute of Physics (Azerbaijan)
R. M. Sadigov, Institute of Physics (Azerbaijan)

Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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