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Proceedings Paper

Comparative analysis of 4x288 readouts and FPAs
Author(s): Fiodor Fedorovych Sizov; Vladimir P. Reva; Yurii P. Derkach; Vladimir V. Vasiliev
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Paper Abstract

Comparative analysis of four 4x288 different designed readouts elaborated at the Institute of Microdevices and the Institute of Semiconductor Physics is presented. Also some features of design 576x6 readouts adduced. All the readouts have the direct injection input circuit with incorporated cells allowing testing without photodiodes. TDI registers have three delay elements between neighbor inputs. Some characteristics of 4x288 FPAs with mercury-cadmium-telluride TDI arrays are cited too. 2-phase and 4-phase CCD readouts (2.5 micron technology) have different channel types (surface, buried and semi-buried), which include 10 bit TDI registers in each channel, and 18 channel multiplexing to 16 outputs. Two polysili-con, one metal level and 400 A dielectric layers were used. The readouts characteristics: charge handling capacity, transfer characteristics, output nonlinearity characteristics, bias dispersion, etc. are presented. CCD technology used for data multiplication results in crosstalk increase, because of the presence of rather considerable transfer inefficiency at cryogenic temperatures. Using 2.5 micron CCD technology and 2.0 CMOS technology the readouts, which include the digital interface for dead pixels deselection, preliminary amplification circuits, 36 channel multiplication by CCD registers and 2 beat multiplication by analogue switches to 4 output amplifiers, were manufactured. One pocket CMOS technology with two polysilicon, two metal levels and 350 A dielectric layers were used. To increase the linearity of transfer characteristics and noise level decrease at the output of CCD the circuits of charge-voltage conversion on the base of operational amplifiers were used. This allows getting circuits with parameters close to those obtained by 0.8 - 1.0 micron CMOS technology. Also some characteristics of 4x288 readouts designed by 1.2 micron CMOS technology are discussed (two polysilicon and two metal levels). This one includes the circuits of auxiliary electronics. Comparative analysis shows that the readouts mentioned are different in numbers of outputs, external service but have rather similar parameters.

Paper Details

Date Published: 15 October 2005
PDF: 8 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596416 (15 October 2005); doi: 10.1117/12.628450
Show Author Affiliations
Fiodor Fedorovych Sizov, Institute of Semiconductor Physics (Ukraine)
Vladimir P. Reva, Institute of Microdevices (Ukraine)
Yurii P. Derkach, Institute of Microdevices (Ukraine)
Vladimir V. Vasiliev, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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