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Proceedings Paper

Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs
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Paper Abstract

InGaN/GaN multiple-quantum-well light-emitting diodes have been fabricated on the (1010) m-plane of 4H-SiC substrates. The c-axes of the m-plane epitaxial films and the substrate are parallel. The surface of the epitaxial films has a ridged texture with the ridges aligned perpendicular to the c-axis. Xray diffraction shows superlattice features from the multiple-quantum well stack, and plan-view transmission electron microscopy shows a threading dislocation density of ~ 1010 cm-2 and a basal plane stacking fault density of ~ 8 × 106 cm-1. The electroluminescence from the LED shows a strong polarization anisotropy with the majority of the light emitted perpendicular to the c-axis and a polarization ratio exceeding 0.8. The temperature dependence of the polarization ratio shows a 49 meV difference in energy gap between the valence band minima with different polarizations.

Paper Details

Date Published: 14 September 2005
PDF: 6 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410J (14 September 2005); doi: 10.1117/12.627959
Show Author Affiliations
Nathan F. Gardner, Lumileds Lighting (United States)
James C. Kim, Lumileds Lighting (United States)
Jonathan J. Wierer, Lumileds Lighting (United States)
Yu-Chen Shen, Lumileds Lighting (United States)
Michael R. Krames, Lumileds Lighting (United States)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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