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Proceedings Paper

MEMS for tunable multi-spectral infrared sensor arrays
Author(s): L. Faraone
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Paper Abstract

A monolithically integrated low temperature MEMS and HgCdTe infrared detector technology has been implemented and characterised. The MEMS-based optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air-gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows high percentage transmission and a wide tuning range which is achieved with a tuning voltage of only 7.5 V. The FWHM ranged from 95-105 nm over a tuning range of 2.2 μm to 1.85 μm. Finite element modelling of various geometries for the silicon nitride membrane is also presented. The modelling is used to determine the best geometry in terms of fill factor, voltage displacement prediction and membrane bowing. The results of stress response of low-temperature plasma-enhanced chemical vapour deposited silicon nitride thin films to thermal cycling are also presented.

Paper Details

Date Published: 29 September 2005
PDF: 12 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59570F (29 September 2005); doi: 10.1117/12.627055
Show Author Affiliations
L. Faraone, The Univ. of Western Australia (Australia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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