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Proceedings Paper

New mechanism of intrinsic laser-induced damage of wide band-gap transparent solids
Author(s): Vitali E. Gruzdev
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Paper Abstract

Recently we have discovered a new regime of ionization taking place in wide band-gap crystalline dielectrics under action of high-intensity laser radiation. Its characteristic feature is occurring of a singularity on dependence of ionization rate on laser intensity what corresponds to blow-up increasing of electron density in conduction band of irradiated material. Assuming that process referred to as collective ionization to be the starting point of initiating intrinsic bulk single-shot damage, we associate damage threshold with the singularity one. Then we consider some consequences resulting from that assumption. In particular, we analyze dependence of the threshold on laser and material parameters in order to find possibilities of experimental checking of our theoretical predictions.

Paper Details

Date Published: 7 February 2006
PDF: 12 pages
Proc. SPIE 5991, Laser-Induced Damage in Optical Materials: 2005, 59910U (7 February 2006); doi: 10.1117/12.626172
Show Author Affiliations
Vitali E. Gruzdev, S.I. Vavilov State Optical Institute (Russia)

Published in SPIE Proceedings Vol. 5991:
Laser-Induced Damage in Optical Materials: 2005
Gregory J. Exarhos; Arthur H. Guenther; Keith L. Lewis; Detlev Ristau; M.J. Soileau; Christopher J. Stolz, Editor(s)

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