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Proceedings Paper

Preparation and characterization of multilayers for EUV applications
Author(s): Th. Foltyn; S. Braun; W. Friedrich; A. Leson; M. Menzel
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Paper Abstract

The dependency of EUV reflectance and of the stress present in Mo/Si/C multilayers on the constituent individual layers has been investigated. The heat treatment of highly EUV reflective Mo/Si/C multilayers has been examined in terms of annealing time and temperature. Irreversible stress change was found at annealing temperatures above 130 °C, where the change of period thickness and the change of stress increase more rapidly. It was found, that there is a saturation of stress change depending on the annealing time. Annealing at 100 °C reveals a saturation of stress change after 10 h, whereas annealing at 150 °C still shows stress reduction after 50 h. A second annealing of two samples shows a reversible stress-temperature behavior of the multilayers. Stress compensation layers for the coating of stress-mitigated Mo/Si/C multilayers were developed. The best results of composition for reflective multilayers and stress-compensation multilayers were joint together in order to fabricate stress-mitigated Mo/Si/C multilayers. Taking the condition of achieving an overall stress below ±100-150 MPa into account, two types of stress-mitigated multilayers were coated. The first type includes a buffer layer in order to compensate the compressive stress of the reflective multilayers without annealing. The stress was reduced to -76 MPa by keeping a high EUV near-normal incidence reflectance of ~70.0 %. The second type contains a thinner buffer layer and the stress reduction of the complete multilayer system was assisted by a post-annealing at 100 °C for 10 h. The stress was measured to be -108 MPa and an EUV reflectance of 69.5 % was obtained.

Paper Details

Date Published: 5 October 2005
PDF: 10 pages
Proc. SPIE 5963, Advances in Optical Thin Films II, 59632C (5 October 2005); doi: 10.1117/12.626116
Show Author Affiliations
Th. Foltyn, IWS Dresden, Fraunhofer-Institute for Material and Beam Technology (Germany)
S. Braun, IWS Dresden, Fraunhofer-Institute for Material and Beam Technology (Germany)
W. Friedrich, IWS Dresden, Fraunhofer-Institute for Material and Beam Technology (Germany)
A. Leson, IWS Dresden, Fraunhofer-Institute for Material and Beam Technology (Germany)
M. Menzel, IWS Dresden, Fraunhofer-Institute for Material and Beam Technology (Germany)


Published in SPIE Proceedings Vol. 5963:
Advances in Optical Thin Films II
Claude Amra; Norbert Kaiser; H. Angus Macleod, Editor(s)

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