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Proceedings Paper

Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures
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Paper Abstract

The performance of multi-layer hetrojunction (MLHJ) HgCdTe photodiodes at high temperatures is presented. The effect of inherent and excess current mechanisms on quantum efficiency and R0A product is analyzed. The diodes with good R0A operability and high quantum efficiency at 200-300 K have been demonstrated at cutoff wavelengths up to 5 μm. The temperature dependence of the differential resistance is discussed. The experimental results show that proper surface passivation and low series/contact resistance are major issues relating to fabrication of HgCdTe detectors with high performance.

Paper Details

Date Published: 30 September 2005
PDF: 8 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59571X (30 September 2005); doi: 10.1117/12.625793
Show Author Affiliations
J. Rutkowski, Military Univ. of Technology (Poland)
A. Rogalski, Military Univ. of Technology (Poland)
J. Piotrowski, VIGO System S.A. (Poland)
A. Piotrowski, VIGO System S.A. (Poland)


Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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