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Proceedings Paper

Co2MnSi growth on semiconductor substrate by double-beams pulsed laser deposition
Author(s): Michel L. Autric; Eric Valerio; Cristiana E. Grigorescu
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Paper Abstract

This present work concerns the growth and the characterization of Co2MnSi thin films deposited onto GaAs substrates. Two PLD configurations have been explored, the conventional 1-Beam-PLD and the 2-Crossed-Beams-PLD one. We demonstrated that, with 1B-PLD conditions, we got Co2MnSi polycrystalline structure with unwanted droplets. The 2CB-PLD allowed us to get droplet-free, single crystalline thin films at substrate temperature as low as 353 K.

Paper Details

Date Published: 19 October 2005
PDF: 7 pages
Proc. SPIE 5958, Lasers and Applications, 59582M (19 October 2005); doi: 10.1117/12.625689
Show Author Affiliations
Michel L. Autric, Univ. de la Méditerranée (France)
Institute of Mechanics of Marseille (France)
Eric Valerio, Univ. de la Méditerranée (France)
Institute of Mechanics of Marseille (France)
Cristiana E. Grigorescu, National Institute of Research & Development for Optoelectronics (Romania)


Published in SPIE Proceedings Vol. 5958:
Lasers and Applications
Krzysztof M. Abramski; Antonio Lapucci; Edward F. Plinski, Editor(s)

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